dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 1 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb complementary pair enhancement mode mosfet product summary device v (br)dss r ds(on) max i d max t a = +25c q1 n - channel 20 v 40 m ? @ v gs = 4.5 v 4.7 a 65 m ? @ v gs = 2 .5v 3 .7 a q2 p - channel - 20 v 90 m ? @ v gs = - 4.5 v - 3. 2 a 137 m ? @ v gs = - 2 .5 v - 2.6 a description this mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load switch ? power managemen t functions ? portable power adaptors features ? low on - resistance ? low input capacitance ? low profile, 0. 6 mm max height ? esd protected g ate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: u - dfn2020 - 6 ? case ma teri al: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish nipd au over copper l eadframe ; solderable per mil - std - 202, method 208 ? terminal connections: see diagram below ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmc204 1 ufdb - 7 u - dfn2020 - 6 3 , 000/tape & reel dmc204 1 ufdb - 13 u - dfn2020 - 6 10 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more informati on about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2014 2015 2016 2017 2018 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d bottom view internal schematic d 4 = product type marking code ym = date code mark ing y = year (ex: b = 20 1 4 ) m = month (ex: 9 = september) s 1 g 1 d2 s2 g2 d1 d2 pin1 q1 n - channel mosfet q2 p - channel mosfet u - dfn2020 - 6 d1 u - dfn2020 - 6 esd protected d 4 y m d1 s1 g1 g ate protection diode d2 s2 g2 g ate protection diode e4
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 2 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol q1 n - channel q2 p - channel units drain - source voltage v dss 20 - 20 v gate - sou rce voltage v gss 12 12 v continuous drain current (note 5 ) v gs = 4.5 v steady state t a = + 25 c t a = + 70 c i d 4.7 3.8 - 3. 2 - 2.5 a t < 5 s t a = + 25 c t a = + 70 c i d 6. 1 4.9 - 4.1 - 3.2 a maximum continuous body diode f orward current (note 5 ) i s 2 - 1 .5 a pu lsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 30 - 1 8 a thermal characteristics characteristic symbol value units total power dissipation (note 5 ) steady state p d 1. 4 w t < 5 s 2. 2 thermal resistance, junction to ambient (note 5 ) steady state r ? ja 92 c/w t < 5 s 55 thermal resistance, junction to case (note 5 ) r ? j c 30 operating and storage temperature range t j, t stg - 55 to 150 c electrical characteristics q1 n - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max uni t test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 20 v v gs = 0v, i d = 250a j = + 25c i dss 1.0 a ds = 20 v, v gs = 0v gate - source leakage i gss 10 a gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) 0. 35 ds = v gs , i d = 250 a ds (on) 23 40 m gs = 4.5 v, i d = 4.2 a 26 65 v gs = 2 .5 v, i d = 3.3 a diode forward voltage v sd 0. 7 1. 2 v v gs = 0 v, i s = 4.4 a dynamic characteristics (note 7 ) input capacitance c iss 713 pf v ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss 80 pf reverse transfer capacitance c rss 68 pf gate resistance r g 15 ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g 8 nc v ds = 10 v, i d = 5.5 a total gate charge ( v gs = 8 v ) 15 nc gate - source charge q gs 1.0 nc gate - drain charge q gd 1.1 nc turn - on delay time t d(on) 3.6 ns v dd = 10 v, v gs = 4.5 v, r l = 2.3 , r g = 1 r 15.9 ns turn - off delay time t d(off) 16.0 ns turn - off fall time t f 2.6 ns body diode reverse recovery time t rr 6.6 n s i s = 4.4a , di /d t = 1 00a/ 1.2 n c i s = 4.4a , di /d t = 1 00a/ notes: 5. device mounted on 1 x 1 fr - 4 pcb with high coverage 2oz. copper, single sided. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 3 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb electrical characteristics q2 p - channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss - 20 v v gs = 0v, i d = - 250a j = + 25c i dss - 1.0 a ds = - 20 v, v gs = 0v gate - source leakage i gss 10 a gs = 8 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(th) - 0.35 ds = v gs , i d = - 250 a ds (on) 59 90 m gs = - 4.5 v, i d = - 2.9 a 76 137 v gs = - 2 .5 v, i d = - 2.3 a diode forward voltage v sd - 0. 65 - 1. 2 v v gs = 0 v, i s = - 3.0 a dynamic characteristics (note 7 ) input capacitance c iss 881 ds = - 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss 84 pf reverse transfer capacitance c rss 67 pf gate resistance r g 14.3 ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 4.5 v ) q g 11 nc v ds = - 10 v, i d = - 3.7 a total gate charge ( v gs = - 8 v ) 18 nc gate - source charge q gs 1.5 nc gate - drain charge q gd 2.3 nc turn - on delay time t d(on) 5.0 ns v dd = - 10 v, v gs = - 4.5 v, r l = 3.3 , r g = 1 r 9.5 ns turn - off delay time t d(off) 29.7 ns turn - off fall time t f 20.4 ns body diode reverse recovery time t rr 23.6 n s i s = - 3.0a , di /d t = 1 00a/ 11.4 n c i s = - 3.0a , di /d t = 1 00a/ notes: 6 . short duration pulse test used to minimize self - heating effect. 7 . gu aranteed by design. not subject to product testing. v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 v = 1.0v gs v = 1.5v gs v = 3.0v gs v = 4.5v gs v = 8.0v gs v = 2.0v gs v = 2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 4 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.02 0.021 0.022 0.023 0.024 0.025 0.026 0.027 0.028 0.029 0.03 0 2 4 6 8 10 12 14 16 18 20 v = 2.5v gs v = 4.5v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 12 14 16 18 20 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 4.2a gs d v = v i = 3.3a gs d 2.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 v = v i = 3.3a gs d 2.5 v = v i = 4.2a gs d 4.5 t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 t = -55c a 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 t = 25c a t = 85c a t = 125c a t = 150c a
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 5 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 f =1mhz c iss c oss c rss v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c iss f = 1mhz c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 v = 10v i = a ds d 5.5 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 0.01 0.1 1 10 100 0.1 1 10 100 t = 150c t = 25c v = 4.5v single pulse j(max) a gs dut on 1 * mrp board v , drain-source voltage (v) figure 13 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 3.0 6.0 9.0 12.0 15.0 0 1 2 3 4 5 v = -1.5v gs v = -1.8v gs v = -3.0v gs v = -4.5v gs v = -8.0v gs v = -2.0v gs v = -2.5v gs v , gate-source voltage (v) gs figure14 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 v = -5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 6 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb i , drain-source current (a) d figure 15 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.04 0.06 0.08 0.1 0.12 0.14 0 3 6 9 12 15 v = -2.5v gs v = -4.5v gs i , drain current (a) d figure 16 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 3 6 9 12 15 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 17 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 v = v i = -2.3a gs d -2.5 v = v i = -2.9a gs d -4.5 t , junction temperature ( c) figure 18 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.02 0.04 0.06 0.08 0.1 0.12 -50 -25 0 25 50 75 100 125 150 v = v i = -2.3a gs d -2.5 v = v i = -2.9a gs d -4.5 t , junction temperature ( c) figure 19 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = -1ma d i = -250a d v , source-drain voltage (v) sd figure 20 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 3 6 9 12 15 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 7 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb v , drain-source voltage (v) ds figure 21 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 c iss c oss c rss f =1mhz q (nc) g , total gate charge figure 22 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 v = -10v i = a ds d -3.7 v , drain-source voltage (v) figure 23 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d t = 150c t = 25c v = -4.5v single pulse j(max) a gs dut on 1 * mrp board r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 100 t1, pulse duration times (sec) figure 24 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 163c/w duty cycle, d = t1/ t2 ?? ? ja ja ja d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.9
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 8 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 ? ? ? ? b 0.20 0.30 0.25 d 1.95 2.075 2.00 d ? ? ? ? d2 0.50 0.70 0.60 e ? ? ? ? e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f ? ? ? ? l 0.25 0.35 0.30 z ? ? ? ? all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
dm c 2 0 4 1 ufdb document number: ds 37420 rev. 2 - 2 9 of 9 www.diodes.com february 2015 ? diodes incorporated dm c 2 0 4 1 ufdb important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and a ny product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assu me all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated pr oducts for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of per sonal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covere d by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporate d. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provid ed in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are so lely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related infor mation or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated a nd its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life sup port devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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